发明名称 |
Transistors having a recessed channel region and methods of fabricating the same |
摘要 |
A transistor includes a substrate and a device isolation layer that is formed on the substrate to define an active region. A gate pattern crosses over the active region. A gate insulation layer is interposed between the gate pattern and the active region. Source and drain regions are formed in the active region adjacent to respective sides of the gate pattern. A channel region is disposed in the active region between the source and drain regions. The channel region includes a recessed portion.
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申请公布号 |
US2006270138(A1) |
申请公布日期 |
2006.11.30 |
申请号 |
US20060499946 |
申请日期 |
2006.08.07 |
申请人 |
JANG YOUNG-CHUL;KIM SUNG-BONG;LIM HOON;JUNG SOON-MOON |
发明人 |
JANG YOUNG-CHUL;KIM SUNG-BONG;LIM HOON;JUNG SOON-MOON |
分类号 |
H01L21/8238;H01L21/336;H01L29/423 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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