NANOPARTICLES IN A FLASH MEMORY USING CHAPERONIN PROTEINS
摘要
<p>A method for fabricating a flash memory device where the flash memory device includes a substantially uniform size and spatial distribution of nanoparticles on a tunnel oxide layer to form a floating gate. The flash memory device may be fabricated by defining active areas in a substrate and forming an oxide layer on the substrate. A self-assembled protein lattice may be formed on top of the oxide layer where the self-assembled protein lattice includes a plurality of molecular chaperones. The cavities of the chaperones may provide confined spaces where nanocrystals can be trapped thereby forming an ordered nanocrystal lattice. A substantially uniform distribution of nanocrystals may be formed on the oxide layer upon removal of the self-assembled protein lattice such as through high temperature annealing.</p>
申请公布号
WO2006127589(A1)
申请公布日期
2006.11.30
申请号
WO2006US19713
申请日期
2006.05.22
申请人
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM;MAO, CHUANBIN;TANG, SHAN;BANERJEE, SANJAY