RESONANT DEFECT ENHANCEMENT OF CURRENT TRANSPORT IN SEMICONDUCTING SUPERLATTICES

摘要

An artificial amorphous semiconductor composite material is provided having a controlled bandgap and mobility. The material comprises a plurality of crystalline semiconductor material quantum dots substantially uniformly distributed and regularly spaced in three dimensions through a matrix of dielectric material, high bandgap semiconductor materi or thin layers of such materials. The bandgap and mobility of the composite material are determined by selecting the material parameters including the size of the quantum dots, and wherein the composition of the resulting matrix includes defects which enhance mobility based on resonance between defect sites in the matrix and the quantum stat of the quantum dot.