| 摘要 |
<p>A semiconductor device and its manufacturing method and a semiconductor device designing method are provided to decrease device size and to economize fabrication costs by omitting a forming process of a first conductive type contact layer using a first conductive type contact region. A first well(16a,16b) is formed in a semiconductor substrate(10). A first transistor is formed on the first well. A second well(32a,32b) is formed in the substrate. A second transistor is formed on the second well. A second conductive type ion implanted layer is buried in the substrate under the first and the second well to apply a bias voltage to the second well. A first conductive type contact region is selectively formed within the second conductive type ion implanted layer under the first well to connect the first well to the substrate.</p> |
