| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve data maintenance characteristics of a nonvolatile memory element of variable resistance type, having a laminate structure comprising a lower electrode, metal oxide and an upper electrode by reducing the probability of detrapping of electric charges from interface trap. <P>SOLUTION: The nonvolatile memory element has a structure in which the lower electrode 2, the metal oxide 3, an insulating film 5 and the upper electrode 4 are stacked in sequence. Electrical resistance characteristics between the lower electrode 2 and the upper electrode 4 change reversibly, by application of electrical stress between the lower electrode 2 and the upper electrode 4. The probability of detrapping of electric charges which are held by the interface trap of the metal oxide 3 is reduced by the insulating film 5, which functions as a trap barrier. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
