| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in a MOSFET using SiC that, when a p-type base region and an n-type source region are formed in a self-aligning manner and when an n-type channel is employed, a p-type impurity concentration of a source region right under the channel of the p-type base region is smaller than that of a p-type impurity concentration under the source region, with the result that application of a high voltage between a source and a drain causes the depletion of the p-type region right under an n-type channel, thus reducing a breakdown voltage. SOLUTION: The p-type channel is formed by an epitaxial growth method. Thus, even if an element is formed in a self-aligning manner, a depletion layer is decreased in the p-type region right under the channel, and a high breakdown voltage can be obtained. Since the element can be formed in the self-aligning manner, the element can be made compact. Consequently, the number of elements available in a constant surface area can be increased and on-resistance can be reduced. COPYRIGHT: (C)2007,JPO&INPIT
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