| 摘要 |
PROBLEM TO BE SOLVED: To provide a CCD (charge coupled device) solid state imaging element, contriving the improvement of S/N (signal to noise) characteristics and sensitivity while capable of suppressing the deterioration of dielectric strength of a transfer electrode. SOLUTION: The solid state imaging element is provided with a semiconductor substrate 5 having a photo receptor unit 2 and a vertical charge transmission unit 4, a transmission electrode 7 impressing a transmission electrode on the vertical charge transmission unit provided on a semiconductor substrate, a low reflection film 9 formed on the photo receptor unit and formed on the side surface unit of the transmission electrode through an interlayer insulating layer, and a light shielding film 11 formed so as to cover the transmission electrode with the low reflection film formed thereon. COPYRIGHT: (C)2007,JPO&INPIT
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