摘要 |
<p>The present invention discloses a polishing slurry for CMP, the said polishing slurry contains polishing abrasive grains, a carrier and an additive, wherein the additive has a hydrophilic group. The properties of the passive film can be changed by altering the structure of the additive in the polishing slurry, thereby it can completely avoid the defect on the polished surface of a substrate ,or it can minimize the rate of defect.</p> |
申请人 |
ANJI MICROELECTRONICS (SHANGHAI) CO., LTD;SHIAO, DANNY, ZHENGLONG;YANG, ANDY, CHUNXIAO |
发明人 |
SHIAO, DANNY, ZHENGLONG;YANG, ANDY, CHUNXIAO |