发明名称 POLISHING SLURRY
摘要 <p>The present invention discloses a polishing slurry for CMP, the said polishing slurry contains polishing abrasive grains, a carrier and an additive, wherein the additive has a hydrophilic group. The properties of the passive film can be changed by altering the structure of the additive in the polishing slurry, thereby it can completely avoid the defect on the polished surface of a substrate ,or it can minimize the rate of defect.</p>
申请公布号 WO2006125371(A1) 申请公布日期 2006.11.30
申请号 WO2006CN00972 申请日期 2006.05.15
申请人 ANJI MICROELECTRONICS (SHANGHAI) CO., LTD;SHIAO, DANNY, ZHENGLONG;YANG, ANDY, CHUNXIAO 发明人 SHIAO, DANNY, ZHENGLONG;YANG, ANDY, CHUNXIAO
分类号 C09G1/02 主分类号 C09G1/02
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