| 摘要 |
<p>A method for manufacturing a fine pattern of a semiconductor device is provided to improve precision of the fine pattern by performing a thin film forming process after forming a resist pattern. A lower resist layer(2), an oxide layer(3), and an upper resist layer(4) are formed in turns on a semiconductor substrate(1). The upper resist layer is exposed and developed to form an upper resist pattern. The oxide layer is etched by using the upper resist pattern as an etching mask. The lower resist layer is etched by using the upper resist pattern and the etched oxide layer to form a lower resist pattern. The lower resist pattern, the oxide layer, and the upper resist pattern are laminated to form a pattern. A pattern forming thin film is deposited on the pattern and the semiconductor substrate and then removed.</p> |
