SEMICONDUCTOR DEVICE COMPRISING A SUPERLATTICE DIELECTRIC INTERFACE LAYER
摘要
A semiconductor device may include a semiconductor substrate and at least one active device adjacent the semiconductor substrate. The at least one active device may include an electrode layer, a high-K dielectric layer underlying the electrode layer and in contact therewith, and a superlattice underlying the high-K dielectric layer opposite the electrode layer and in contact with the high-K dielectric layer. The superlattice may include a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
申请公布号
CA2609602(A1)
申请公布日期
2006.11.30
申请号
CA20062609602
申请日期
2006.05.02
申请人
MEARS TECHNOLOGIES, INC.
发明人
HUANG, XIANGYANG;HYTHA, MAREK;MEARS, ROBERT J.;KREPS, SCOTT A.;HALILOV, SAMED;RAO, KALIPATNAM VIVEK;DUKOVSKI, ILIJA;STEPHENSON, ROBERT JOHN;YIPTONG, JEAN AUSTIN CHAN SOW FOOK