Semi-conductor devices

摘要

1,000,023. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. Jan. 24, 1964 [Feb. 6, 1963; March 21, 1963], Nos. 4840/63 and 11252/63. Heading H1K. A semi-conductor wafer 5, Fig. 1A, containing a PN junction is mounted (bonded or unbonded) on a conducting base 1, is surrounded by an insulating annulus 13 secured-as by a bracket 12-to the base, and has an unbonded electrode 8 on its upper face. This electrode is carried by a conducting diaphragm 9, e.g. of beryllium copper, secured at its periphery to the annulus 13 and urged towards the wafer by external resilient means. In Fig. 2A this means is a spring 25 incorporated in a heat-dissipating mounting frame 20 within which the assembly of Fig. 1A may be mounted base down, as shown, or base up. In Fig. 2B the wafer 4 has two junctions and electrode connections with the copper base 1, the diaphragm 10 and a wire 30 which passes through the hermetically sealed insulator 34. It is shown mounted in a heat dissipating frame 20 which may incorporate cooling fins (not shown) and within which the resilient means for the unbonded contact with diaphragm 10 is provided by a spring washer 23. The wafer may be a diode, in which case the central aperture 33 in the diaphragm, the insulator 34 and the wire 30 will be omitted. Fig. 4B shows a diode 4 in an alternative mounting to which it may be permanently or detachably secured, the electrodes being the base 51 of the mounting and a conducting stem 65 which is fitted on the diaphragm 10 and urges it onto the diode under the action of spring members 66. The stem 65 may be made hollow to accommodate a wire, such as the wire 30 of Fig. 2B, for use of the same mount with three electrode devices.