LIGHT EMITTING DIODE HAVING P-TYPE ELECTRODE-PAD WITH IMPROVED ELECTRICAL CHARACTERISTIC AND ADHESION

摘要

A light emitting diode is provided to realize a first p-type electrode pad having improved adhesion with a p-type semiconductor layer and an excellent electrical characteristic by forming a transparent electrode so as to surround the lateral and upper surfaces of the first p-type electrode pad. An N-type semiconductor layer(20) is positioned on a substrate(10). A P-type semiconductor layer(40) is positioned on a partial region on the N-type semiconductor layer. A light emitting layer(30) is interposed between the N-type semiconductor layer and the P-type semiconductor layer. A first p-type electrode pad(60) is positioned in a partial region on the P-type semiconductor layer. A transparent electrode(50) is positioned on the first P-type electrode pad and the P-type semiconductor layer, surrounding the upper and lateral surfaces of the first P-type electrode pad. A second P-type electrode pad(70) is positioned on a partial region of the transparent electrode in which the first P-type electrode pad is positioned. The transparent electrode is made of one of Ni, Au, or ITO(indium tin oxide).