发明名称 POLISHING PAD AND USING CHEMICAL MECHANICAL POLISHING APPARATUS
摘要 A polishing pad and a CMP apparatus using the same are provided to improve polishing speed and polishing uniformity by forming uniformly dispersion of slurries. A first groove pattern(400) having a concentric shape is formed on a surface of a polishing pad. A second groove pattern(410) is formed spirally on the surface of the polishing pad from a center part of the concentric shape of the first groove pattern to the outside to be overlapped with the first groove pattern. A third groove pattern is formed radially on the surface of the polishing pad from the center part of the concentric shape of the first groove pattern to be overlapped with the first and the second groove pattern.
申请公布号 KR20060121497(A) 申请公布日期 2006.11.29
申请号 KR20050043716 申请日期 2005.05.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, YONG SOO
分类号 H01L21/304;B24B37/20 主分类号 H01L21/304
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