A METHOD FOR USING PLASMA ETCHING EQUIPMENT

摘要

A method for using a plasma etching apparatus is provided to prevent inflow of dust or pollutants into a gap between electrodes by sealing the gap between the electrodes by lowering a shroud ring. An assembling process is performed to assemble a plasma etching apparatus(S100). An upper electrode is moved to a lower direction to move a shroud ring located on the upper electrode to a predetermined position lower than a surface of a lower electrode(S200). An inner part of the process chamber is formed in a high vacuum state by using a vacuum pump connected with a process chamber(S300). A gap between the upper electrode and the lower electrode is 4 cm to 1 cm.