| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a resistance thin film in which the attainment of high temperature stability and the regulation of a resistance temperature coefficient to almost zero can be simultaneously realized though their simultaneous realization has hitherto been impossible even by Ni-Cr-Al-Si based alloys. <P>SOLUTION: Using a target obtained from a resistance thin film material having a composition comprising, by mass, 1 to 15% Al and 0.01 to 0.5% rare earth elements, and the balance substantially Cr and Ni in which the Cr/Ni reaches 0.15 to 1.1 by mass, a resistance thin film composed of an Ni-Cr-Al-rare earth element alloy is formed on an insulating material substrate by a sputtering process, and thereafter, the substrate with the thin film deposited is subjected to heat treatment at 200 to 500°C for 1 to 10 hr in the air, thus the resistance thin film for a thin film resistor is obtained. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
