Monolithically integrated power IGBT device (Insulated Gate Bipolar Transistor)

摘要

A power IGBT device is described being monolithically integrated and comprising an input terminal (I10) suitable to receive an input voltage (Vin) and an output terminal (O10) suitable to supply a current (Iout) with limited and predetermined highest value. Such IGBT device comprising an IGBT power element (2) inserted between said output terminal (O10) and a supply reference (GND) and having a control terminal (15) connected to the input terminal (110) by means of a control circuit (12) comprising at least a transistor (18) inserted between the control terminal (15) and the supply reference (GND) and a resistive element (Rc) inserted between the input terminal (I10) and the control terminal (15).