| 摘要 |
<p>A flash memory device is provided to prevent a threshold voltage from being lowered by short-channel effect even if a control gate having a width of a nano scale is formed by sufficiently maintaining the length of a channel even though a control gate having a very small width is formed. A source/drain diffusion region(10b) is formed at both sides of a trench formed in an active region of a semiconductor substrate(10), as being separated from each other. A control gate(20) is protruded from the inside of the trench to a portion on the substrate. A charge storage layer is formed on outer wall of the control gate, interposed between the inner wall of the trench and the control gate. A pair of insulation spacers(22) are formed on both sidewalls of the control gate and at both sides of the charge storage layer. The depth from the surface of the substrate to the bottom part of the trench is greater than that of the source/drain diffusion region.</p> |
