发明名称 ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION APPARATUS FOR MANUFACTURING SEMICONDUCTOR
摘要 An atmospheric pressure chemical vapor deposition apparatus for manufacturing a semiconductor is provided to largely increase productivity by cooling a muffle within a short time. An atmospheric pressure is maintained inside a muffle(10). The muffle forms a temperature process atmosphere by using a heater. A plurality of supply holes(11) are formed at an upper surface of the muffle(10) to open upwardly. A wafer conveying unit(20) rotates from one side of the muffle to another side thereof by a driving unit. A wafer is mounted on an upper surface of the wafer conveying unit, which enters into the muffle. A cooling gas supply pipe(31) is fixed to the muffle so that injection nozzles(33) are positioned downwardly through the gas supply holes. A cooling unit(30) injects cooling gas into the muffle through the injection nozzles.
申请公布号 KR20060121363(A) 申请公布日期 2006.11.29
申请号 KR20050043474 申请日期 2005.05.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JO, JUNG HO
分类号 H01L21/205 主分类号 H01L21/205
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