发明名称 |
ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION APPARATUS FOR MANUFACTURING SEMICONDUCTOR |
摘要 |
An atmospheric pressure chemical vapor deposition apparatus for manufacturing a semiconductor is provided to largely increase productivity by cooling a muffle within a short time. An atmospheric pressure is maintained inside a muffle(10). The muffle forms a temperature process atmosphere by using a heater. A plurality of supply holes(11) are formed at an upper surface of the muffle(10) to open upwardly. A wafer conveying unit(20) rotates from one side of the muffle to another side thereof by a driving unit. A wafer is mounted on an upper surface of the wafer conveying unit, which enters into the muffle. A cooling gas supply pipe(31) is fixed to the muffle so that injection nozzles(33) are positioned downwardly through the gas supply holes. A cooling unit(30) injects cooling gas into the muffle through the injection nozzles.
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申请公布号 |
KR20060121363(A) |
申请公布日期 |
2006.11.29 |
申请号 |
KR20050043474 |
申请日期 |
2005.05.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JO, JUNG HO |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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