| 摘要 |
A method for fabricating a semiconductor device is provided to solve a problem that electrical characteristics such as on-resistance and a critical voltage of a MOSFET(Metal Oxide Semiconductor Field Effect Transistor) vary, by suppressing a variation of an electrical characteristic between semiconductor substrates. A gate insulation layer and a gate electrode are formed on a semiconductor substrate(S102). The thickness of a modification layer formed on the semiconductor substrate is obtained(S106). The implantation parameter or the annealing parameter is calculated so that a diffusion layer has predetermined sheet resistance based upon the obtained thickness of the modification layer. Impurity elements are implanted into both sides of the gate electrode of the semiconductor substrate based upon a predetermined implantation parameter to form a pair of diffusion layers(S108). An activation annealing process is performed based upon a predetermined annealing parameter(S116). The parameter calculation process is performed based upon a relation of the thickness of the obtained modification layer and sheet resistance and thickness of the modification layer of the diffusion layer of the previously obtained implantation parameter or the annealing parameter.
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