Method to remove spacer after salicidation to enhance contact etch stop liner stress on mos,申请号SG20060001451-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	Method to remove spacer after salicidation to enhance contact etch stop liner stress on mos
摘要
申请公布号	SG126827(A1)	申请公布日期	2006.11.29
申请号	SG20060001451	申请日期	2006.03.06
申请人	CHARTERED SEMICONDUCTOR MANUFACTURING LTD.	发明人	WAY TEH YOUNG;MENG LEE YONG;WOH LAI CHUNG;WENHE LIN;YONG LIM KHEE;LENG TAN WEE;SUDIJONO JOHN;PENG KOH HUI;CHOO HSIA LING
分类号		主分类号
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Method, system and device for increasing multimedia messaging service system capacity

Exposure apparatus and device fabrication method

Detector housing

Audio coding using de-correlated signals

Automatic configuration of multiple monitor systems

Frequency conversion mixer

Cross-plied composite ballistic articles

Recovering from errors in streaming DSP applications

Compositions of R(+) and S(−) pramipexole and methods of using the same

Power semiconductor module including a multilayer substrate

Reliable reception of messages written via RDMA using hashing

Sorting device and method for sorting goods in transit for an aircraft

Search ranking estimation

Semiconductor device and semiconductor integrated circuit

Reverse curved nozzle for radial inflow turbines

Semiconductor device and method for forming the same

Nanoparticle doped hybrid photorefractives

Electrical interconnect with an electrical pathway including at least a first member overlain by a second member at a contact point

Activators of peroxisome proliferator-activated receptors