发明名称 Fet amplifier, pulse modulation module, and radar device
摘要 An FET (5) has a gate connected to a high-frequency signal input circuit (7) and an output unit of a reverse amplifier (4). The reverse amplifier (4) has a non-reverse input unit connected to a constant voltage circuit (1) generating a DC constant voltage signal and a reverse input unit connected to a gate bias control signal input circuit (2) via an inverter circuit (3). The reverse amplifier (4) outputs a positive (Hi state) gate bias voltage when the output voltage from the inverter circuit (3) is 0V, and a low (Low state) gate bias voltage lower than the pitch-off voltage of the FET (5) when the output voltage from the inverter circuit (3) is a predetermined positive voltage. The FET (5) is turned ON/OFF by the gate bias voltage, pulse-modulates the high-frequency signal inputted, and outputs the signal.
申请公布号 GB2426646(A) 申请公布日期 2006.11.29
申请号 GB20050026221 申请日期 2005.02.23
申请人 MURATA MANUFACTURING CO., LTD 发明人 SADAO YAMASHITA
分类号 H03C1/62;G01S7/282;H03F1/30;H03F3/189;H03F3/193;H03F3/21;H03F3/72 主分类号 H03C1/62
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