发明名称 |
Fet amplifier, pulse modulation module, and radar device |
摘要 |
An FET (5) has a gate connected to a high-frequency signal input circuit (7) and an output unit of a reverse amplifier (4). The reverse amplifier (4) has a non-reverse input unit connected to a constant voltage circuit (1) generating a DC constant voltage signal and a reverse input unit connected to a gate bias control signal input circuit (2) via an inverter circuit (3). The reverse amplifier (4) outputs a positive (Hi state) gate bias voltage when the output voltage from the inverter circuit (3) is 0V, and a low (Low state) gate bias voltage lower than the pitch-off voltage of the FET (5) when the output voltage from the inverter circuit (3) is a predetermined positive voltage. The FET (5) is turned ON/OFF by the gate bias voltage, pulse-modulates the high-frequency signal inputted, and outputs the signal. |
申请公布号 |
GB2426646(A) |
申请公布日期 |
2006.11.29 |
申请号 |
GB20050026221 |
申请日期 |
2005.02.23 |
申请人 |
MURATA MANUFACTURING CO., LTD |
发明人 |
SADAO YAMASHITA |
分类号 |
H03C1/62;G01S7/282;H03F1/30;H03F3/189;H03F3/193;H03F3/21;H03F3/72 |
主分类号 |
H03C1/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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