GERMANIUM ON INSULATOR STRUCTURE AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

A germanium on an insulator structure and a semiconductor device using the same are provided to simplify the manufacturing process by improving its structure. An insulating layer(110) having at least one window(111) is formed on a single crystalline substrate(101) to expose a part of the single crystalline substrate. An epitaxial growth part is formed from a surface of the substrate exposed by the window. The epitaxial growth part is formed with a silicon/germanium alloy. A crystallized single crystalline germanium layer(120) is formed on the insulating layer and the epitaxial growth part by using a surface of the epitaxial growth part with a crystallization seed layer.