LOW DEFECT EPITAXIAL SEMICONDUCTOR SUBSTRATE HAVING GETTERING FUNCTION, IMAGE SENSOR USING THE SAME AND FABRICATION METHOD THEREOF

摘要

A low defect epitaxial semiconductor substrate, an image sensor using the same and a manufacturing method thereof are provided to getter easily metallic dopants by using a non-carrier type dopant layer and to heal easily defects of the substrate by using a carrier type dopant layer. An epitaxial semiconductor substrate structure includes a semiconductor substrate(10), a carrier type dopant layer, a non-carrier type dopant layer and an epitaxial layer. The carrier type dopant layer(30) is formed in the substrate. The non-carrier type dopant layer(20) is formed in the carrier type dopant layer. The epitaxial layer(40) is formed on an upper surface of the substrate.