发明名称 |
Method and apparatus for anisotropic etching |
摘要 |
There is disclosed a method of treating a substrate material or a film present on the material surface comprising cyclically performing the following steps: (a) etching the material or film; (b) depositing or forming a passivation layer on the surfaces of an etched feature; and (c) selectively removing the passivation layer from the etched feature in order that the etching proceeds in a direction substantially perpendicular to the material or film surface. At least one of the steps (a) or (b) is performed in the absence of a plasma. Also disclosed is an apparatus for performing the method.
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申请公布号 |
US7141504(B1) |
申请公布日期 |
2006.11.28 |
申请号 |
US20010744212 |
申请日期 |
2001.03.07 |
申请人 |
SURFACE TECHNOLOGY SYSTEMS PLC |
发明人 |
BHARDWAJ JYOTI KIRON |
分类号 |
H01L21/302;H01L21/461;B01J12/00;B01J19/24;B81C1/00;C01B7/24;C07C17/00;H01L21/306;H01L21/3065;H01L21/311;H01L21/3213 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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