| 摘要 |
A CMOS image sensor and a method for fabricating the same are disclosed, in which the fabrication costs are reduced by reducing the number of photolithographic processes and yield is improved by obviating an alignment problem between color filter layers and microlenses. In one embodiment, the CMOS image sensor includes a sub layer provided with a unit pixel (e.g., a photodiode and various transistors), a planarization layer on the sub layer, and microlens-color filter structures formed on the planarization layer at constant intervals. |
