| 摘要 |
A die identifying mark having a dummy oxide layer block is provided to prevent a dishing phenomenon in a CMP(chemical mechanical polishing) process of a conductive material for filling a contact hole by including a plurality of dummy oxide layer blocks having a similar pattern density to the contact hole. A die identifying mark(20) is formed in an interlayer dielectric of a scribe region, corresponding to a contact hole in a chip region and including a fill region(21) and a plurality of dummy oxide layer blocks(22). The fill region is filled with a conductive material just like the contact hole. The plurality of dummy oxide layer blocks are surrounded by the fill region. The dummy oxide layer blocks are disposed in a lattice pattern type.
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