| 摘要 |
<p>A method for manufacturing a flash memory device is provided to increase device yield by preventing generation of program disturbance within a memory cell connected with a first word line. A tunnel oxide layer(111), a floating gate poly(112), a dielectric layer(113), a control gate poly(114), a tungsten nitride layer(115), a tungsten layer(116), and a hard mask(117) are sequentially formed on a substrate. The hard mask is patterned. The tungsten layer and the tungsten nitride layer are etched by using a plasma gas. The residual tungsten layer, the residual tungsten nitride layer, and a part of the control gate poly are etched by using the plasma gas. The residual control gate poly is etched by using the plasma gas. The control gate poly of a memory cell connected with a first word line and the control gate poly of a selection transistor are over-etched. The dielectric layer and the floating gate poly are etched.</p> |
