| 摘要 |
A non-uniform ion implanting apparatus and method are provided to obtain a uniform device characteristic on the entire wafer by implanting impurity ions of different densities into respective regions of the wafer, wherein a boundary line between a high-density impurity ion implanting region and a low-density impurity ion implanting region is formed definitely and smoothly. A wide ion beam generating unit(400) generates a wide ion beam composed of a plurality of wide ion beams respectively overlapping at least two regions of the entire wafer. While the side ion beam formed by the wide ion beam generating unit is irradiated, a wafer driving apparatus vertically reciprocates the wafer. At least one of the plurality of wide ion beams has a different dose from that of another ion beam among the plurality of wide ion beams.
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