发明名称 Transistor-level signal cutting method and structure
摘要 A modifiable circuit structure and its method of formation are disclosed. The modifiable circuit structure electrically couples one portion of an interconnect with another portion of the interconnect through vias disposed in a dielectric layer. The combination of the modifiable circuit structure, the interconnect portions, and the vias provide a signal path between transistors in an integrated circuit. In one embodiment the modifiable circuit structure is a polysilicon feature formed over regions of a semiconductor substrate. In an alternative embodiment, the modifiable circuit structure is a diffusion region formed in region the semiconductor substrate.
申请公布号 US7141439(B2) 申请公布日期 2006.11.28
申请号 US20050045523 申请日期 2005.01.28
申请人 INTEL CORPORATION 发明人 LIVENGOOD RICHARD H.;SLAWECKI DARREN
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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