发明名称 |
Methods of fabricating Fin-field effect transistors (Fin-FETs) having protection layers |
摘要 |
Methods for fabricating Fin-Field Effect Transistors (Fin-FETs) are provided. A fin is formed on an integrated circuit substrate. The fin defines a trench on the integrated circuit substrate. A first insulation layer is formed in the trench such that a surface of the first insulation layer is recessed beneath a surface of the fin exposing sidewalls of the fin. A protection layer is formed on the first insulation layer and a second insulation layer is formed on the protection layer in the trench such that protection layer is between the second insulation layer and the sidewalls of the fin. Related Fin-FETs are also provided.
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申请公布号 |
US7141456(B2) |
申请公布日期 |
2006.11.28 |
申请号 |
US20040871742 |
申请日期 |
2004.06.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE DEOK-HYUNG;CHOI SI-YOUNG;LEE BYEONG-CHAN;JUNG IN-SOO;HEO JIN-HWA |
分类号 |
H01L21/84;H01L21/332;H01L21/336;H01L29/786 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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