| 摘要 |
A method for fabricating a CMOS(complementary metal oxide semiconductor) image sensor is provided to reduce reflectivity of light and increase sensitivity of a CMOS image sensor by etching nitride layers in a pad region and a pixel region. After a pad(210) is formed, an oxide layer(220) and a nitride layer(230) are deposited. The nitride layers in a pad region and a pixel region is selectively removed by a photolithography process, and then a first cleaning process is performed. A hydrogen annealing process is performed. The oxide layer in the pad region is eliminated to open the pad, and a second cleaning process is performed. A pad protection layer(250) is deposited. A color filter array process, a planarization process, and a micro lens process are performed. The pad protection layer in the pad region is removed. The first cleaning process is composed of an ashing step and a solvent cleaning step. The second cleaning process is composed of a first ashing step, a solvent cleaning step and a second ashing step.
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