| 摘要 |
An MOCVD apparatus includes a raw material supply section configured to supply a process raw material into a process chamber. The raw material supply section includes a bubbling unit that stores an organic metal raw material in a liquid state. A carrier gas line is configured to supply, into the bubbling unit, a carrier gas that causes the organic metal raw material in a liquid state to bubble up. A flow rate control portion is provided on the carrier gas line to control the carrier gas flow rate. The flow rate control portion includes a plurality of mass flow controllers, which are disposed in parallel with each other and have full-scales different from each other for flow rate control. The mass flow controllers are switched for use, in accordance with the carrier gas flow rate.
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