METHOD OF MANUFACTURING LIGHT EMITTING DIODE HAVING METAL OXIDE CONDUCTING LAYER AND THE PRODUCT

摘要

A method for manufacturing a light emitting diode having a metal oxide conducting layer and a product thereby are provided to enhance light-transmitting characteristics by growing a metal oxide conductive layer on a p-type gallium nitride semiconductor layer. A multilayered semiconductor layer(20) is formed on a light-transmitting substrate(10). An n-type gallium nitride semiconductor layer(21) and a p-type gallium nitride semiconductor layer(22) are sequentially laminated on the multilayered semiconductor layer. An N-pole metal electrode(23) and a P-pole metal electrode(24) are formed on an outer surface of the multilayered semiconductor layer to connect electrically the n-type gallium nitride semiconductor layer and the p-type gallium nitride semiconductor layer to each other. A metal oxide conductive layer(25) is formed between the p-type gallium nitride semiconductor layer and the P-pole metal electrode.