MOS TRANSISTOR HAVING A RECESS CHANNEL AND FABRICATION METHOD THEREOF

摘要

A MOS transistor having a recess channel and its fabricating method are provided to suppress gate induced drain leakage current by increasing a thickness of a gate insulating layer formed on a sidewall of a hole of a channel part contacting an impurity region in comparison with a thickness of a gate insulating layer formed on a bottom of the hole of the channel part. An isolation layer(105) is formed on a semiconductor substrate(100) to define an active region(105a). One or more holes(110) of a channel part are formed to cross the active region within the semiconductor substrate of the active region. A low gate insulating layer(135) having a first thickness is formed on a bottom of the hole of the channel part. A lateral gate insulating layer(130) having a second thickness thicker than the first thickness is formed on a sidewall of the hole of the channel part which comes in contact with the semiconductor substrate. A gate electrode(145) is used for filling up the hole of the channel part.