SEMICONDUCTOR DEVICES HAVING NITROGEN INCORPORATED ACTIVE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device with a nitrogen implanting active region is provided to embody a semiconductor device capable of adjusting a threshold voltage as using high-K dielectrics as a membrane material of a gate dielectric layer by forming a nitrogen implanting active region in a first region of a semiconductor substrate and by sequentially stacking a first gate dielectric layer and a first gate electrode on the nitrogen implanting active region. First and second regions(1,2) are defined in a semiconductor substrate(51). A nitrogen implanting active region(61) is disposed in the first region of the semiconductor substrate. A first gate electrode(73) is disposed on the nitrogen implanting active region. A first gate dielectric layer(75') is interposed between the nitrogen implanting active region and the first gate electrode, including high-K dielectrics(63) and a nitrogen-containing high dielectric layer(63N). A second gate electrode(74) is disposed on the semiconductor substrate in the second region. A second gate dielectric layer is interposed between the semiconductor substrate in the second region and the second gate electrode, including the high-K dielectrics. The first and second gate dielectric layers have the same thickness. The nitrogen-containing high dielectric layer comes in contact with the nitrogen implanting active region. A first well(53) is disposed in the first region of the semiconductor substrate. A second well(54) is disposed in the second region of the semiconductor substrate. The first well is a p-well, and the second well is an n-well or a p-well.