Semiconductor device having a multilayer interconnection structure, fabrication method thereof, and designing method thereof

摘要

A semiconductor device includes an interconnection structure in which via-plug density is higher in an upper layer part than a lower layer part, wherein the peeling of the lower via-plugs at the time of formation of the upper-via-plugs is avoided by restricting the density of the upper s, defined for a unit area having a size of 50-100 mum for each edge, to be 60% or less.