发明名称 Plasma processing apparatus and method
摘要 A plasma processing apparatus includes a vacuum chamber that accommodates an object to be processed, and provides a plasma process to the object in a vacuum or reduced pressure environment, a dielectric for transmitting microwaves to the vacuum chamber and for maintaining the vacuum or reduced environment of the vacuum chamber, a plate that has slots for guiding the microwaves to the dielectric, and a temperature control mechanism that has a cooling channel between the plate and the dielectric, and controls temperature of the dielectric.
申请公布号 US7140321(B2) 申请公布日期 2006.11.28
申请号 US20030725403 申请日期 2003.12.03
申请人 CANON KABUSHIKI KAISHA 发明人 NAKAYAMA TOMIO;ODA HIROHISA;ISHIHAMA HITOSHI;KURAMOCHI KAZUMICHI;TAKAHASHI JUNYA
分类号 C23C16/00;C23C16/511;C23F1/00;H01J7/24;H01J37/32;H01L21/02;H01L21/205;H01L21/306;H01L21/3065;H05B31/26 主分类号 C23C16/00
代理机构 代理人
主权项
地址