Semiconductor device and method for fabricating the same

摘要

Into a channel formation region of a semiconductor substrate of p-type silicon, indium ions are implanted at an implantation energy of about 70 keV and a dose of about 5x10¹³/cm², thereby forming a p-doped channel layer. Next, germanium ions are implanted into the upper portion of the semiconductor substrate at an implantation energy of about 250 keV and a dose of about 1x10¹⁶/cm², thereby forming an amorphous layer in a region of the semiconductor substrate deeper than the p-doped channel layer.