Thin film transistor semiconductor device

摘要

In a TFT with a GOLD structure, there is provided a structure which is able to improve an operating characteristic and reliability and reduce an off current value in order to reduce power consumption of a semiconductor device. The surface of LDD region ( 4 ) overlapped with a portion ( 7 a) of a gate electrode through a gate insulating film ( 6 ) interposed therebetween is extremely flattened. Thus, it is possible to obtain a TFT structure which is capable of reducing a parasitic capacitance in the LDD region of the TFT with the GOLD structure, reducing an off current value, improving reliability, and enabling high speed operation.