| 摘要 |
A method is provided for creating a phase mask for lithographic exposure operations. In this case, phase-shifting regions ( 10 ) with a different phase are defined on both sides of critical structures ( 6 ), which fall below an extent limit. At least one phase shifter correction is carried out such that at least two mutually facing phase-shifting regions ( 10 ) are joined together to form a contiguous phase-shifting region ( 10 ) if their distance from one another falls below a predetermined minimum distance.
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