| 摘要 |
<p>A three-dimensional stacked image sensor is provided to guarantee a fill factor of a maximum 93 percent in a back illuminated device by including a back illuminated sensor made of a multilayered silicon structure having a reflection layer between detecting layers. A buffer oxide layer and a dielectric layer are sequentially formed on the upper surface of a handle wafer to form a substrate. The dielectric layer is formed as an optical filter layer that can assist a color selection of each color layer of an image sensor as an ONO multilayered filter stack(113,123,133,143). A semiconductor layer(121,131,141) for an image sensor is formed on a donor wafer, and a donor wafer for transferring a thin film is prepared. The donor wafer is inverted to be bonded to the upper surface of the substrate, and a silicon layer of a separated donor wafer except the semiconductor layer transferred by a transfer of an ultra thin film is eliminated. A dielectric layer is formed on the resultant structure. The processes performed after the handle wafer is prepared are repeated to form a stack structure of silicon and dielectric on the handle wafer. The uppermost layer of the transferred semiconductor layer is made of a transistor layer(151). A transistor is completed to be connected to a lower semiconductor layer of a multilayered structure, and a pixel separation is performed. A solder bumper(161) is formed to package a flip chip.</p> |
