发明名称 |
Electroabsorption modulator |
摘要 |
The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.
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申请公布号 |
US7142342(B2) |
申请公布日期 |
2006.11.28 |
申请号 |
US20030453376 |
申请日期 |
2003.06.02 |
申请人 |
AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD. |
发明人 |
BOUR DAVID P.;TANDON ASHISH;CORZINE SCOTT W.;LIN CHAOKUN |
分类号 |
G02F1/03;G02F1/015;G02F1/017;G02F1/07 |
主分类号 |
G02F1/03 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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