发明名称 Element substrate and light emitting device
摘要 A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor.
申请公布号 US7141934(B2) 申请公布日期 2006.11.28
申请号 US20040799857 申请日期 2004.03.15
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OSAME MITSUAKI;ANZAI AYA;YAMAZAKI YU
分类号 G09G5/00;H01L51/50;G09G3/20;G09G3/30;G09G3/32;H01L29/786;H05B33/14;H05B37/00;H05B37/02 主分类号 G09G5/00
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