| 摘要 |
The invention provides a semiconductor light emitting device and the method of making it. The semiconductor light emitting device, according to the invention, includes an undoped In<SUB>x</SUB>GA<SUB>y</SUB>Al<SUB>2</SUB>N film, as an Ohmic layer, formed between a top-most semiconductor material layer and a transparent conductive oxide layer. Since the undoped film as a tunneling layer is very thin (<=20 angstroms), the electric field across the tunneling layer, under forward bias, will make electron tunneling from valence band to conduction band, and return to the transparent conductive layer, A reasonably low and stable forward voltage of the semiconductor light emitting device according to the invention can be achieved.
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