发明名称 Low temperature silicided tip
摘要 A tip, connected to a metal chip component, for forming readable changes in a memory storage system is disclosed. The tip includes a conductive layer, an amorphous silicon layer, and a silicide outer layer. The silicide outer layer contains a metal that has an anneal temperature to form the silicide outer layer at a temperature below that which damages the chip component.
申请公布号 US7142449(B2) 申请公布日期 2006.11.28
申请号 US20040759565 申请日期 2004.01.16
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 SMITH JAMES D.;NOVET THOMAS E.;GOVYADINOV ALEXANDER
分类号 G11C11/14;G11C5/00 主分类号 G11C11/14
代理机构 代理人
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