METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to secure the uniformity of a single crystal silicon structure by removing properly protrusions from a second single crystal silicon layer. An amorphous silicon layer is formed on a first single crystal silicon layer(200). A second single crystal silicon layer(220) is formed on the resultant structure by transforming the amorphous silicon layer into a single crystal structure. At this time, a plurality of protrusions(222) are formed on the second single crystal silicon layer. The plurality of protrusions are then removed from an upper surface of the second single crystal silicon layer.