| 摘要 |
A method for forming a metal line of a semiconductor device is provided to improve oxidation, pollution, and diffusion of a copper line by preventing exposure of a lower metal line and improving deposition force with respect to a barrier metal layer. A first etch-stop layer(20), a first interlayer dielectric, a second etch-stop layer, a second interlayer dielectric, and a hard mask are sequentially formed on a semiconductor substrate(10) including a lower metal line. A via-hole and a metal line trench are formed by patterning the hard mask, the second interlayer dielectric, the etch-stop layer, and the first interlayer dielectric. An ion layer and a barrier metal layer(30b) are formed thereon. The lower metal line is exposed by removing the first etch-stop layer to maintain the barrier metal layer formed on sidewalls of the via-hole and the metal line trench. A metal contact plug and an upper metal line are fabricated by forming a copper layer within the via-hole and the metal line trench.
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