发明名称 |
Module with a built-in semiconductor and method for producing the same |
摘要 |
In a module with a built-in semiconductor, higher densification is achieved by disposing inner vias close to a semiconductor device. A module which has a space ( 107 ) between a first wiring layer ( 102 a) and a built-in semiconductor device ( 105 ). The module is obtained by: mounting the semiconductor device ( 105 ) on a first wiring layer ( 102 a) of a wiring board ( 103 ) without using a sealing resin; stacking on the circuit board an electrically insulating substrate having a through bore (inner via) ( 104 ) filled with a conductive paste and an opening for receiving the semiconductor device, and a mold release carrier having a second wiring layer ( 102 b) in the stated order; and heating and pressurizing so that the semiconductor device ( 105 ) is incorporated in a core layer ( 101 ) which is formed by curing the electrically insulating substrate.
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申请公布号 |
US7141884(B2) |
申请公布日期 |
2006.11.28 |
申请号 |
US20040872727 |
申请日期 |
2004.06.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KOJIMA TOSHIYUKI;NAKATANI SEIICHI;SUGAYA YASUHIRO;YAMAMOTO YOSHIYUKI |
分类号 |
H01L29/40;H01L23/31;H01L23/538;H01L27/146;H01L27/148;H01L31/0203;H01L31/0232;H05K1/18;H05K3/20;H05K3/46 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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