| 摘要 |
A p-type contact ( 30 ) is disclosed for flip chip bonding and electrically contacting a p-type group III-nitride layer ( 28 ) of a group III-nitride flip chip light emitting diode die ( 10 ) with a bonding pad ( 60 ). A first palladium layer ( 42 ) is disposed on the p-type group III-nitride layer ( 28 ). The first palladium layer ( 42 ) is diffused through a native oxide of the p-type group III-nitride layer ( 28 ) to make electrical contact with the p-type group III-nitride layer ( 28 ). A reflective silver layer ( 44 ) is disposed on the first palladium layer ( 42 ). A second palladium layer ( 46 ) is disposed on the silver layer ( 44 ). A bonding stack ( 48 ) including at least two layers ( 50, 52, 54 ) is disposed on the second palladium layer ( 46 ). The bonding stack ( 48 ) is adapted for flip chip bonding the p-type layer ( 28 ) to the bonding pad ( 60 ).
|
