| 摘要 |
A metal line structure and a forming method thereof are provided to improve electro-migration resistance and stress-migration resistance and to enhance reliability by using an improved adhesive layer. A lower trench is formed on a first insulating layer(102). A first diffusion barrier(104) is formed along an inner surface of the lower trench. A lower metal line(105) is filled in the lower trench. An interlayer diffusion barrier(106) on the lower metal line. The interlayer diffusion barrier is made of a high fusion point metal or a high fusion point metal compound. A second insulating layer(108) is formed thereon. A via hole for reaching the lower metal line is formed through the resultant structure. A second diffusion barrier(112) is formed along an inner surface of the via hole. A conductor(114) is filled in the via hole. An adhesive layer(106a) is formed from an upper surface of the lower metal line along the via hole. The adhesive layer is made of the same material as that of the interlayer diffusion barrier. A contact width between the adhesive layer and the lower metal line is in a predetermined range of 1 to 7 nm. The height of the adhesive layer is in a predetermined range of 3 to 15 nm. |
